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| HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances IXFH 20N60Q IXFT 20N60Q VDSS ID25 RDS(on) = = = 600 V 20 A 0.35 trr 250ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 600 600 30 40 20 80 20 30 1.5 15 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns TO-247 AD (IXFH) (TAB) TO-268 (IXFT) Case Style G (TAB) S D = Drain TAB = Drain W C C C C G = Gate S = Source 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 300 Features IXYS advanced low gate charge process International standard packages Low gate charge and capacitance - easier to drive - faster switching Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 600 2.0 4.5 100 25 1 0.35 V V nA A mA Advantages Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2003 IXYS All rights www..netreserved DS98549C(03/03) IXFH 20N60Q IXFT 20N60Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 10 20 3300 VGS = 0 V, VDS = 25 V, f = 1 MHz 410 130 20 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1.5 (External) 20 45 20 90 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 45 0.42 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 80 1.5 250 A A V ns C A Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V 0.85 8 TO-268 Outline Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFH 20N60Q IXFT 20N60Q Fig. 1. Output Characteristics @ 25 Deg. C 20 1 7.5 1 5 VGS = 10V 9V 8V 7V 6V 48 40 VGS = 10V 9V 8V 7V Fig. 2. Extended Output Characteristics @ 25 deg. C ID - Amperes 1 2.5 1 0 7.5 5 2.5 0 0 1 2 ID - Amperes 32 24 6V 1 6 8 0 5V 5V V DS - Volts 3 4 5 6 7 8 0 4 8 1 2 1 6 20 24 V DS - Volts Fig. 3. Output Characteristics @ 125 Deg. C 20 1 7.5 1 5 VGS = 10V 9V 8V 7V 6V Fig. 4. RDS(on) Normalized to ID25 Value vs. Junction Temperature 3 VGS = 10V 1 2.5 1 0 7.5 5 2.5 0 0 RDS(on) - Normalized 2.5 ID - Amperes 2 ID = 20A 1 .5 ID = 10A 1 5V 0.5 3 6 9 1 2 1 5 1 8 -50 -25 0 25 50 75 1 00 1 25 1 50 V DS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D25 Value vs. I D 3 VGS = 10V T J = 125C 24 20 Fig. 6. Drain Current vs. Case Temperature RDS(on) - Normalized 2.5 2 ID - Amperes T J = 25C 1 6 1 2 8 4 0 1 .5 1 0.5 0 1 0 20 30 40 50 -50 -25 0 25 50 75 1 00 1 25 1 50 ID - Amperes TC - Degrees Centigrade (c) 2003 IXYS All rights reserved IXFH 20N60Q IXFT 20N60Q Fig. 7. Input Admittance 40 35 30 25 20 1 5 1 0 5 0 3.5 4 4.5 5 5.5 6 6.5 7 T J = -40C 25C 125C 42 36 T J = -40C 25C 125C Fig. 8. Transconductance Gfs - Siemens ID - Amperes 30 24 1 8 1 2 6 0 0 1 0 20 30 40 50 60 V GS - Volts ID - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 60 50 1 0 Fig. 10. Gate Charge 8 IS - Amperes 40 VDS = 300V ID = 10A IG = 10mA VGS - Volts T J = 25C 0.9 1 .1 6 30 20 1 0 0 0.3 0.5 0.7 T J = 125C 4 2 0 0 20 40 60 80 1 00 V SD - Volts QG - nanoCoulombs Fig. 11. Capacitance 1 0000 f = 1M Hz 1 Fig. 12. Maximum Transient Thermal Resistance Capacitance - pF C iss 1 000 C oss R(th)JC - (C/W) 25 30 35 40 0.1 C rss 1 00 0 5 1 0 1 5 0.01 V DS - Volts 20 1 Pulse Width - milliseconds 1 0 1 00 1 000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 |
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